Sunday, August 01, 2010

US Patent 7764534 - Memristive memory cell with gate controlled diode

This patent from SanDisk3D teaches a variation of 1R1D memristive memory cells using a gate controlled vertical diode structure as an isolation element to avoid sneak paths. Claim 1 reads:

1. A nonvolatile memory cell, comprising:

a gate controlled diode steering element,

wherein the gate controlled diode steering element comprises a substantially pillar shaped diode steering element; and

a resistivity switching element electrically connected to the gate controlled diode steering element.