US Patent 7763978 - 3D nanowire crossbar array
http://www.freepatentsonline.com/7763978.html
For the past 10 years researchers at HPLabs have been developing nanowire circuit fabrics based on crossbar arrays fabricated by nanoimprint lithography. This latest patent teaches a three-dimensional nanowire crossbar design which may allow for 3D ultradense non-volatile memory. Claim 1 reads:
1. A configurable three-dimensional crossbar array system comprising:
a plurality of crossbar arrays, each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, a third layer of nanowires overlaying the second layer of nanowires, and a crossbar junction located at an intersection of three overlaying nanowires;
a first demultiplexer configured to address at least a portion of the nanowires in the first layer of nanowires of each crossbar array;
a second demultiplexer configured to address at least a portion of the nanowires in the second layer of nanowires of each crossbar array; and
a third demultiplexer configured to supply a signal to at least a portion of the nanowires in the third layer of nanowires of each crossbar array.
For the past 10 years researchers at HPLabs have been developing nanowire circuit fabrics based on crossbar arrays fabricated by nanoimprint lithography. This latest patent teaches a three-dimensional nanowire crossbar design which may allow for 3D ultradense non-volatile memory. Claim 1 reads:
1. A configurable three-dimensional crossbar array system comprising:
a plurality of crossbar arrays, each crossbar array includes a first layer of nanowires, a second layer of nanowires overlaying the first layer of nanowires, a third layer of nanowires overlaying the second layer of nanowires, and a crossbar junction located at an intersection of three overlaying nanowires;
a first demultiplexer configured to address at least a portion of the nanowires in the first layer of nanowires of each crossbar array;
a second demultiplexer configured to address at least a portion of the nanowires in the second layer of nanowires of each crossbar array; and
a third demultiplexer configured to supply a signal to at least a portion of the nanowires in the third layer of nanowires of each crossbar array.
Labels: Hewlett Packard
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