Sunday, March 14, 2010

US Patent 7675766 - Ion conductor mem-resistor

Mem-resistors are nanoscale circuit elements which use ionic transport in thin films to create a resistance switching effect. This patent from Axon Technologies has priority going back to 2000 and includes some basic claims to ion conductor memrstors. Claim 1 reads:

1. A microelectronic programmable structure comprising:

a first electrode;

an ion conductor proximate the first electrode; and

a second electrode, wherein the first electrode and the second electrode are formed of a material comprising material selected from the group consisting of metals, metal silicides, and doped polysilicon materials.

It is notable that earlier ion conductor resistance switching structures were disclosed such as US Patent 4839700 which may effect the novelty of the patent claims.