US Patent 7671398 - Hybrid stacked nanomemory
http://www.freepatentsonline.com/7671398.html
This patent suggests the integration of molecular memory arrays with more conventional memory cells. Claim 1 reads:
1. A nano device, comprising:
a. a first array of memory elements including ROM, PROM, EPROM, EEPROM, DRAM, SRAM, MRAM, FRAM, or SMM;
b. a second array of nano memory elements spin coated and vertically stacked with the first array of memory elements; and
c. a decoder coupled to the first and second arrays to select one of the memory elements.
This patent suggests the integration of molecular memory arrays with more conventional memory cells. Claim 1 reads:
1. A nano device, comprising:
a. a first array of memory elements including ROM, PROM, EPROM, EEPROM, DRAM, SRAM, MRAM, FRAM, or SMM;
b. a second array of nano memory elements spin coated and vertically stacked with the first array of memory elements; and
c. a decoder coupled to the first and second arrays to select one of the memory elements.
<< Home