Thursday, March 04, 2010

US Patent 7671398 - Hybrid stacked nanomemory

This patent suggests the integration of molecular memory arrays with more conventional memory cells. Claim 1 reads:

1. A nano device, comprising:

a. a first array of memory elements including ROM, PROM, EPROM, EEPROM, DRAM, SRAM, MRAM, FRAM, or SMM;

b. a second array of nano memory elements spin coated and vertically stacked with the first array of memory elements; and

c. a decoder coupled to the first and second arrays to select one of the memory elements.