US Patent 7638383 - CNT growth using faceted catalysts
http://www.freepatentsonline.com/7638383.html
This patent from Intel teaches a method to control the size and growth direction of carbon nanotubes by using a faceted Ge dot as a catalyst material during CVD. Claim 1 reads:
1. A method comprising:
forming a self-assembled catalytic dot having a plurality of facets on a substrate for a microelectronic device;
growing a carbon nanotube on one of the facets of the dot to extend therefrom, wherein the dot is doped to have a growth promoting layer on the facet on which the nanotube is grown and is doped to have a growth inhibiting layer on the others of the plurality of facets.
This patent from Intel teaches a method to control the size and growth direction of carbon nanotubes by using a faceted Ge dot as a catalyst material during CVD. Claim 1 reads:
1. A method comprising:
forming a self-assembled catalytic dot having a plurality of facets on a substrate for a microelectronic device;
growing a carbon nanotube on one of the facets of the dot to extend therefrom, wherein the dot is doped to have a growth promoting layer on the facet on which the nanotube is grown and is doped to have a growth inhibiting layer on the others of the plurality of facets.
Labels: Intel
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