Sunday, November 22, 2009

US Patent 7619257 - Epitaxially grown graphene FETs

This patent from Alcatel-Lucent provides a step toward manufacturing graphene transistors which may provide higher current and lower noise to future field effect transistors. Claim 1 reads:

1. A device comprising:

a body including a single crystal, electrically insulative first region on a major surface of said body, said first region having a hexagonal crystal lattice substantially lattice-matched to graphene,

at least one epitaxial layer of graphene disposed on said first region of said body, and

a multi-layered, single crystal, electrically insulative second region disposed on said at least one graphene layer, said second region having a hexagonal crystal lattice within each layer thereof and being substantially lattice-matched to graphene.