US Patent 7615788 - SiC MEMS
http://www.freepatentsonline.com/7615788.html
This patent from Cornell Research Foundation teaches monolithically integrated MEMS capable of withstanding a harsher environment than conventional silicon MEMS by using silicon carbide material. Claim 1 reads:
1. A device formed on a silicon carbide substrate, the device comprising:
silicon carbide based monolithic integrated signal conditioning or system control circuitry supported by the substrate; and
a silicon carbide containing microelectromechanical structure supported by the silicon carbide substrate.
This patent from Cornell Research Foundation teaches monolithically integrated MEMS capable of withstanding a harsher environment than conventional silicon MEMS by using silicon carbide material. Claim 1 reads:
1. A device formed on a silicon carbide substrate, the device comprising:
silicon carbide based monolithic integrated signal conditioning or system control circuitry supported by the substrate; and
a silicon carbide containing microelectromechanical structure supported by the silicon carbide substrate.
Labels: Cornell Research Foundation
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