Sunday, November 15, 2009

US Patent 7615788 - SiC MEMS

This patent from Cornell Research Foundation teaches monolithically integrated MEMS capable of withstanding a harsher environment than conventional silicon MEMS by using silicon carbide material. Claim 1 reads:

1. A device formed on a silicon carbide substrate, the device comprising:

silicon carbide based monolithic integrated signal conditioning or system control circuitry supported by the substrate; and

a silicon carbide containing microelectromechanical structure supported by the silicon carbide substrate.