Wednesday, November 11, 2009

US Patent 7615402 - Electrically operated tunneling transistor

This patent from Acorn Technologies teaches a new type of nanoscale transistor design which appears to be a modification of a single electron transistor with reduced tunnel junction resistance. Claim 1 reads:

1. A method, comprising forming a conduction path between a pair of tunnel junctions each having a resistance less than or equal to approximately a quantum resistance by shifting energy states of an island formed of a material having a non-uniform density of energy states characterized by separated conduction and valence bands that behave as continuous energy bands, the island being disposed between the tunnel junctions.