Thursday, May 14, 2009

US Patent 7531892 - Superconducting boron nanostructures

This patent from Yale teaches a method of forming a (relatively) high temperature superconductor material based on boron nanostructures which may have some future use in high current power transmission. Claim 1 reads:

1. A one-dimensional superconducting device comprising a boron nanostructure having a diameter of less than 50 nm and impregnated with an electron donor element, said boron nanostructure having a superconducting transition temperature of about 100 degrees K.