Tuesday, May 12, 2009

US Patent 7531068 - Silicon nanodot film deposition


Erbium is known to be a useful semiconductor dopant for optical amplifiers and lasers. This patent from the Electronics and Telecommunications Research Institute (S.Korea) teaches using Erbium doping to produce an enhanced quantum dot light emission device. Claim 1 reads:

1. A method for manufacturing a silicon nanodot film for light emission, comprising:

(a) placing a substrate on a stage within a chamber; and

(b) depositing a matrix thin film in the form of nanodots on said substrate by introducing a reaction gas into said chamber and generating plasma, while doping said deposited matrix thin film with a light emitting material by sputtering said light emitting material into said chamber.