US Patent 7528437 - CNT EEPROM

http://www.freepatentsonline.com/7528437.html

This patent from Nantero teaches integrating their nanotube ribbon switch architecture with field effect transistors to form EEPROM memory cells. Claim 1 reads:

1. An electrically erasable programmable read only memory (EEPROM) cell, comprising:

a cell selection transistor comprising a gate, a source, a drain, and a channel between the source and the drain; and

a storage cell for storing the informational state of the EEPROM cell, wherein the storage cell includes a gate, a source, a drain, a channel between the source and the drain, and a nanotube switch capable of at least two states, wherein one of the source and the drain of the cell selection transistor electrically contacts one of the source and the drain of the storage cell, and wherein the state of the nanotube switch represents the informational state of the EEPROM cell, wherein the storage cell is writable and readable via said selection transistor with write times and read times being within an order of magnitude of each other.