Thursday, March 12, 2009

US Patent 7501650 - P-type semiconductor carbon nanotube

This patent from Samsung teaches a method of manufacturing p-type carbon nanotube semiconductors which are stable at high temperature. Claim 1 reads:

1. A p-type semiconductor carbon nanotube comprising:

a carbon nanotube;

a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube; and

fullerene attached to the inner wall of the carbon nanotube.