US Patent 7501650 - P-type semiconductor carbon nanotube
http://www.freepatentsonline.com/7501650.html
This patent from Samsung teaches a method of manufacturing p-type carbon nanotube semiconductors which are stable at high temperature. Claim 1 reads:
1. A p-type semiconductor carbon nanotube comprising:
a carbon nanotube;
a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube; and
fullerene attached to the inner wall of the carbon nanotube.
This patent from Samsung teaches a method of manufacturing p-type carbon nanotube semiconductors which are stable at high temperature. Claim 1 reads:
1. A p-type semiconductor carbon nanotube comprising:
a carbon nanotube;
a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube; and
fullerene attached to the inner wall of the carbon nanotube.
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