Sunday, October 19, 2008

US Patent 7435637 - Quantum wire gate

This patent from Intel teaches a method using quantum wires to form the channels of FETs in which isolation doping is used between the quantum wires. Claim 1 reads:

1. A method comprising:

forming a plurality of quantum wires in a substrate, wherein each of the plurality of quantum wires is narrower than the mean free path of semiconductive electron flow therein and wherein a trench is formed between adjacent quantum wires;

disposing a doping region in the substrate beneath each trench to resist electrical communication between adjacent quantum wires; and

forming a gate layer over the plurality of quantum wires, wherein a spacer mask is formed between the quantum wire and the gate layer.