US Patent 7273636 - Metal oxide deposition using DPN
http://www.freepatentsonline.com/7273636.html
Metal oxides are an important material for semiconductor manufacture to form a variety of structures such as contact electrodes for semiconductor devices such as FETs. This patent from NanoInk uses the technology of Dip Pen Nanolithography to pattern precursor material for metal oxides. Claim 1 reads:
1. A method of nanolithography comprising: providing a substrate, providing a nanoscopic tip having an inking composition thereon, wherein the inking composition comprises at least one metal oxide precursor; transferring the inking composition from the nanoscopic tip to the substrate to form a deposit on the substrate comprising at least one metal oxide precursor.
Metal oxides are an important material for semiconductor manufacture to form a variety of structures such as contact electrodes for semiconductor devices such as FETs. This patent from NanoInk uses the technology of Dip Pen Nanolithography to pattern precursor material for metal oxides. Claim 1 reads:
1. A method of nanolithography comprising: providing a substrate, providing a nanoscopic tip having an inking composition thereon, wherein the inking composition comprises at least one metal oxide precursor; transferring the inking composition from the nanoscopic tip to the substrate to form a deposit on the substrate comprising at least one metal oxide precursor.
Labels: Dip Pen nanolithography, Nanoink
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