Tuesday, September 18, 2007

US Patent 7271434 - High surface area for capacitors formed from nanostructures


This patent from Intel continues to fortify it's IP protection of the use of nanostructures to form high surface area capacitors. Claim 1 reads:

1. A device comprising: a lower conductor; an insulating nanostructure disposed over said lower conductor, said insulating nanostructure being part of a discontinuous layer, said insulating nanostructure being loosely arranged as discrete insulating nanostructure; a thin conductor disposed over said insulating nanostructure wherein portions of said thin conductor are disposed in contact with said lower conductor; a thin dielectric disposed over said thin conductor; and an upper conductor disposed over said thin dielectric.

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