US Patent 7233041 - Complementary nanowire inverter
http://www.freepatentsonline.com/7233041.html
This patent to Nanosys claims a structure analogous to a CMOS inverter but formed using aligned arrays of nanowires. Claim 1 reads:
1. An article comprising: at least a first and a second population of semiconducting nanowires disposed at distinct, non-overlapping regions from each other on a surface of a substrate, wherein nanowires in the first and second population each comprise a core and one or more shell layers disposed about said core; at least a first and a second pair of spaced-apart electrical contacts disposed at the distinct regions on the surface of the substrate, wherein at least two nanowires in each of the respective first and second populations of nanowires span and are electrically connected to the electrical contacts of each of the respective first and second pair of electrical contacts; and wherein nanowires in each of the first and second population of nanowires are substantially oriented in a first direction on the surface of the substrate.
This patent to Nanosys claims a structure analogous to a CMOS inverter but formed using aligned arrays of nanowires. Claim 1 reads:
1. An article comprising: at least a first and a second population of semiconducting nanowires disposed at distinct, non-overlapping regions from each other on a surface of a substrate, wherein nanowires in the first and second population each comprise a core and one or more shell layers disposed about said core; at least a first and a second pair of spaced-apart electrical contacts disposed at the distinct regions on the surface of the substrate, wherein at least two nanowires in each of the respective first and second populations of nanowires span and are electrically connected to the electrical contacts of each of the respective first and second pair of electrical contacts; and wherein nanowires in each of the first and second population of nanowires are substantially oriented in a first direction on the surface of the substrate.
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