US Patent 7183568 - Piezoelectric/Nanotube memory
http://www.freepatentsonline.com/7183568.pdf
The electrical conductivity of carbon nanotubes is believed to be highly sensitive to strain and stress. This patent form IBM attempts to take advantage of this property to form electronic devices using a piezoelectric layer for gate control. Claim 1 reads:
1. A memory device, comprising: at least one memory cell comprising: a layer of piezoelectric material; and a nanotube structure mounted such that a change of shape of said piezoelectric material causes a change in a stress in said nanotube structure.
The electrical conductivity of carbon nanotubes is believed to be highly sensitive to strain and stress. This patent form IBM attempts to take advantage of this property to form electronic devices using a piezoelectric layer for gate control. Claim 1 reads:
1. A memory device, comprising: at least one memory cell comprising: a layer of piezoelectric material; and a nanotube structure mounted such that a change of shape of said piezoelectric material causes a change in a stress in said nanotube structure.
Labels: IBM, nanotube, piezoelectric
posted by blaisemouttet at 9:37 AM
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