Wednesday, January 31, 2007

US Patent 7170120 - Nanotube transistor using delta doped region

Intel has a growing number of patents dealing with nanotube based transistor configurations. This patent focuses on improving the ON/OFF current ratio for nanotube FETs. Claim 1 reads:

1. A transistor comprising a Carbon nanotube channel between a doped semiconductor region and an undoped semiconductor region, said undoped semiconductor region between said Carbon nanotube and a delta doped region that is doped opposite that of said doped semiconductor region.

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