Wednesday, January 24, 2007

US Patent 7166786 - Nanoimprint Lithography Doping

Semiconductor fabrication used in making integrated circuits usually requires a step of adding a dopant material to silicon via diffusion or ion implantation which can be costly. Imprint lithography is an alternative maskless lithography technique being explored which basically uses a stamping method to directly transfer a pattern to a target substrate. This patent from Borealis Technical Ltd. has priority going back to 1998 and presents a fairly broad claim to using this technique for semiconductor doping. Claim 1 reads:

1. A method for the induction of a band gap in a substance, comprising the steps of: (a) mounting a material on a substrate, (b) forming at least one nanostructure in said material by pressing a nanostructured mold into said material, said nanostructure having a relief causing de Broglie interference of elementary particles.

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