Thursday, June 07, 2012

US Patent 8193030 - ReRAM with nanotube stabilization layer

This patent from Samsung teaches using a carbon nanotube layer to stabilize the resistance switching properties of ReRAM memory cells. Claim 1 reads:

1. A method of fabricating a storage node useable in a nonvolatile memory device, the method comprising:

forming a lower metal layer;

forming a first oxide on a surface of the lower metal layer;

forming a middle metal layer on the first oxide;

forming a second oxide on a surface of the middle metal layer;

forming an upper metal layer on the second oxide;

forming a carbon nanotube layer on the upper metal layer; and

forming a passivation layer on the carbon nanotube layer.