Thursday, May 03, 2012

US Patent 8168964 - High speed, low power graphene FET

This patent from NEC teaches a graphene-based transistor in which the electrodes, the channel, and the interconnections are all formed from graphene providing simpler manufacture and ease of integration of multiple transistors. Claim 1 reads:

1. A semiconductor device using a field effect, comprising:

a channel layer formed of semiconductor graphene;

electrode layers formed of metal graphene for a source, a drain, and a gate, the electrode layers serving as interconnections; and

a gate insulating layer for insulating the channel layer and the gate electrode layer from each other, wherein the channel layer and the electrode layers are located on the same plane;

wherein, the semiconductor graphene has an armchair edge with a width of 20 nm or less while the metal graphene has a zigzag edge with a width of 20 nm or less.