Thursday, February 16, 2012

US Patent 8115189 - Silica nanowire

This patent from Samsung teaches the manufacture of silica nanowires having excellent capacitance and light absorbing properties. Claim 1 reads:

1. A silica nanowire comprising a core portion and an inner region surrounding and contacting the core portion, wherein the core portion comprises a silicon rich oxide and the inner region comprises silicon nanodots.