US Patent 8115189 - Silica nanowire
http://www.freepatentsonline.com/8115189.html
This patent from Samsung teaches the manufacture of silica nanowires having excellent capacitance and light absorbing properties. Claim 1 reads:
1. A silica nanowire comprising a core portion and an inner region surrounding and contacting the core portion, wherein the core portion comprises a silicon rich oxide and the inner region comprises silicon nanodots.
This patent from Samsung teaches the manufacture of silica nanowires having excellent capacitance and light absorbing properties. Claim 1 reads:
1. A silica nanowire comprising a core portion and an inner region surrounding and contacting the core portion, wherein the core portion comprises a silicon rich oxide and the inner region comprises silicon nanodots.
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