Thursday, November 10, 2011

US Patent 8053782 - Graphene phototransistor

Graphene has become increasing popular in the last few years for its potential in achieving high speed nanoelectronics. This patent from IBM teaches additional advantages of graphene to achieve photodetection over a broader range of wavelengths than conventional semiconductor materials. Claim 1 reads:

1. A photodetecting device comprising:

a. a substrate;

b. a gate oxide layer deposited on said substrate;

c. a channel layer of graphene deposited on said gate oxide layer; and

d. source and drain contact regions disposed on said graphene layer wherein multiple source and drain regions are provided.