Thursday, November 10, 2011

US Patent 8053760 - CNT thin film transistor

There have been numerous patents issued over the past ten years for thin film transistors using carbon nanotube material. This latest version is from Hon Hai Precision (Foxconn) and teaches a CNT thin film transistor with improved carrier mobility. Claim 1 reads:

1. A thin film transistor comprising:

a source electrode;

a drain electrode spaced from the source electrode;

a semiconductor layer comprising a carbon nanotube structure, the carbon nanotube structure comprises of carbon nanotubes; and

a gate electrode insulated from the source electrode, the drain electrode, and the semiconducting layer by an insulating layer, wherein the carbon nanotube structure is connected to both the source electrode and the drain electrode, an angle exist between each carbon nanotube of the carbon nanotube structure and a surface of the semiconductor layer, and the angle ranges from about 0 degrees to about 15 degrees.