US Patent 7993750 - CNT/gallium thermal interface
http://www.freepatentsonline.com/7993750.html
This patent from Hon Hai Precision (Foxconn) teaches a thermal interface material based on gallium and carbon nanotubes which provides high heat conduction with a more compatible coefficient of thermal expansion than conventional metal thermal interfaces. Claim 1 reads:
1. A thermal interface material, comprising:
a continuous array of carbon nanotubes comprising carbon nanotubes and interspaces defined between the carbon nanotubes; and
a low melting point metallic material is located in the interspaces;
wherein the low melting point metallic material is gallium.
This patent from Hon Hai Precision (Foxconn) teaches a thermal interface material based on gallium and carbon nanotubes which provides high heat conduction with a more compatible coefficient of thermal expansion than conventional metal thermal interfaces. Claim 1 reads:
1. A thermal interface material, comprising:
a continuous array of carbon nanotubes comprising carbon nanotubes and interspaces defined between the carbon nanotubes; and
a low melting point metallic material is located in the interspaces;
wherein the low melting point metallic material is gallium.
<< Home