Thursday, August 11, 2011

US Patent 7993750 - CNT/gallium thermal interface

This patent from Hon Hai Precision (Foxconn) teaches a thermal interface material based on gallium and carbon nanotubes which provides high heat conduction with a more compatible coefficient of thermal expansion than conventional metal thermal interfaces. Claim 1 reads:

1. A thermal interface material, comprising:

a continuous array of carbon nanotubes comprising carbon nanotubes and interspaces defined between the carbon nanotubes; and

a low melting point metallic material is located in the interspaces;

wherein the low melting point metallic material is gallium.

Labels: ,