Monday, July 25, 2011

US Patent 7982204 - Unstable nanowire nitrides to form semiconductor structures

This patent from Intel teaches how metal nanowire nitrides can be used to improve layer adhesion during semiconductor fabrication processes. Claim 5 reads:

5. A semiconductor structure comprising:

a substrate;

a metal nanowire nitride layer over said substrate; and

a region of substantially nitride free metal formed in said layer.