Wednesday, May 11, 2011

US Patent 7939404 - Nanowire capacitor grown from graphene mask

Further scalability of DRAM memory to the nanoscale may require the use of capacitors formed from carbon nanotubes or nanowires. This patent from Hynix Semiconductor teaches a way to achieve this using graphene based masks. Claim 1 reads:

1. A method for making a capacitor of a semiconductor device, the method comprising:

forming a graphene seed film over a substrate;

performing a first plasma process on the graphene seed;

growing a graphene on the graphene seed film;

growing a nano tube or a nano wire using the graphene as a mask; and

sequentially forming a dielectric film and a conductive layer over the nano tube or the nano wire, wherein the nano tub or the nano wire, the dielectric film, and the conductive layer define the capacitor.