Tuesday, January 18, 2011

US Patent 7872250 - Nanoporous phase change RAM


This patent from Samsung teaches a way to reduce the reset current of phase change memory by forming nano air pores within a GeSeTe phase change material. Claim 1 reads:

1. A PRAM (phase-change random access memory) comprising:

a switching element; and

a data storage connected to the switching element, the data storage including a first electrode, a second electrode, and a porous PCM (phase-change material) interposed between the first electrode and the second electrode.