Friday, December 31, 2010

US Patent 7859035 - Fullerene MIM memory

Certain metal-insulator-metal structures have shown to exhibit memristive (i.e. memory resistive) effects which have been suggested as a new form of non-volatile memory called ReRAM and which has been projected to be a future replacement for Flash memory. This patent from Samsung teaches one variation or ReRAM using fullerene material. Claim 1 reads:

1. A storage node, comprising:

a first metal layer;

a first insulating layer;

a second metal layer; and

a first nano-structure layer, sequentially stacked,

the first nano-structure layer being formed on an upper surface of the second metal layer, wherein the first metal layer is a lower electrode, the second metal layer is an upper electrode, and the first nano-structure layer is a carbon nano-structure layer.