Thursday, December 30, 2010

US Patent 7858990 - Trench graphene FET

Graphene has attracted attention due to its high electron mobility (about 100x silicon) and since its band gap can be tuned based on the control of fabricated dimensions. This patent from AMD proposes a fabrication method to simplify manufacture of graphene based electronics. Claim 1 reads:

1. A process comprising:

forming a trench defined by one or more layers of material;

forming a graphene layer within the trench; and

forming a device structure on the graphene layer and within the trench.