US Patent 7829443 - GaN nanowire LEDs

http://www.freepatentsonline.com/7829443.html

This latest patent from QuNano teaches manufacturing techniques use to grow array of GaN nanowires for LEDs which can reduce defect densities relative to GaN films. Claim 22 reads:

22. A semiconductor device comprising a plurality of nanowires, the nanowires epitaxially connected to and upstanding from a substrate, wherein:

in at least a majority of the nanowires each nanowire has the same crystal structure through its respective entire length;

the nanowires are provided with a volume element comprising at least one shell layer;

the semiconductor device is a LED;

the plurality of nanowires are individual nanostructured LEDs; and

a pn-junction is provided by the nanowires combined with their respective volume elements, such that the nanowires are doped one of n or p-type and the volume element is doped another one of p or n type.