Tuesday, November 09, 2010

US Patent 7829050 - Metal-silicide nanowire crossbars


Metal silicides are important to microelectronics for forming ohmic or Schottky contacts between metals and silicon. This patent from HP extends metal silicides to the nanoscale by using techniques of nanoimprint lithography. Claim 14 reads:

14. A nanowire structure, comprising:

a substrate comprising an electrically insulating layer;

a number of substantially single-crystal metal-silicide nanowires positioned on the electrically insulating layer.