US Patent 7781061 - Graphene transistor on BN substrate

http://ip.com/patent/US7781061

This latest patent from Alcatel-Lucent teaches a method of epitaxial growth of graphene layers on a boron nitride substrate to form high speed graphene transistors. Claim 1 reads:
1. An apparatus, comprising:

a crystalline substrate with a diamond-type lattice and a substantially (111)-surface, the crystalline substrate being a cubic boron nitride substrate;

a graphene-like layer on the substantially (111)-surface; and

a region comprising boron nitride on a portion of the graphene-like layer, the portion of the graphene-like layer being located between the region comprising boron nitride and the substrate.