US Patent 7776682 - Copper nanotube memory cell

http://ip.com/patent/US7776682

This patent from Spansion teaches a fabrication method for a new type of memory cell which uses porous templates to form copper nanotubes to facilitate ionic memory storage. Claim 1 reads:

1. A method of forming a memory cell, comprising:

forming a first electrode over a semiconductor substrate;

forming a passive layer over the first electrode, the passive layer comprising copper sulfide;

forming an electrically non-conducting material layer with ordered porosity over the passive layer;

forming an active material inside the ordered porosity of the electrically non-conducting material layer;

forming copper nanotubes in the ordered porosity of the electrically non-conducting material layer; and

forming a second electrode over to the active material.