Wednesday, August 18, 2010

US Patent 7776307 - Concentric gate nanotube transistor

Etamota is a company with expertise in growing carbon nanotubes and semiconductor nanowires. This patent from the company teaches a method of forming vertical carbon nanotubes as the channels of field effect transistors using an AAO template. Claim 1 reads:

1. A method of making a device comprising:

anodizing an aluminum substrate to produce an alumina template with a plurality of pores, each having a pore diameter;

forming a conductive layer in the pores;

forming on the conductive layer in the pores an insulating layer; and

exposing the alumina template having pores to a hydrocarbon gas at a temperature to grow carbon nanotubes in the pores, each carbon nanotube having an outer diameter less than the pore diameter of the pore in which the carbon nanotube is produced,

wherein when growing the carbon nanotubes, the carbon nanotubes are electrically insulated from the conductive layer by the insulating layer.