Sunday, June 13, 2010

US Patent 7732805 - CNT image sensor

This patent from Dongbu Hitek Co. is based on the finding that carbon nanotubes can increase the quantum efficiency of photodiodes. Claim 1 reads:

1. An image sensor comprising:

a substrate including transistor circuitry;

a lower interconnection on the substrate connected to the transistor circuitry a first conductive-type conductive layer on the lower interconnection;

an intrinsic layer on the first conductive-type conductive layer;

carbon nanotubes on the intrinsic layer; and

a conductive polymer layer coated on the carbon nanotubes, wherein the carbon nanotubes are doped with a second conductive-type material.