US Patent 7732805 - CNT image sensor
http://www.freepatentsonline.com/7732805.html
This patent from Dongbu Hitek Co. is based on the finding that carbon nanotubes can increase the quantum efficiency of photodiodes. Claim 1 reads:
1. An image sensor comprising:
a substrate including transistor circuitry;
a lower interconnection on the substrate connected to the transistor circuitry a first conductive-type conductive layer on the lower interconnection;
an intrinsic layer on the first conductive-type conductive layer;
carbon nanotubes on the intrinsic layer; and
a conductive polymer layer coated on the carbon nanotubes, wherein the carbon nanotubes are doped with a second conductive-type material.
This patent from Dongbu Hitek Co. is based on the finding that carbon nanotubes can increase the quantum efficiency of photodiodes. Claim 1 reads:
1. An image sensor comprising:
a substrate including transistor circuitry;
a lower interconnection on the substrate connected to the transistor circuitry a first conductive-type conductive layer on the lower interconnection;
an intrinsic layer on the first conductive-type conductive layer;
carbon nanotubes on the intrinsic layer; and
a conductive polymer layer coated on the carbon nanotubes, wherein the carbon nanotubes are doped with a second conductive-type material.
Labels: Dongbu Hitek Co.
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