Sunday, June 13, 2010

US Patent 7732316 - Controlled fabrication of vertical CNTFETs

This patent is from Hynix Semiconductor and teaches a fabrication process for carbon nanotube transistors which may increase reliability during mass production. Claim 1 reads:

1. A manufacturing method of a semiconductor device, the method comprising:

forming a layer comprising a plurality of hemispherical single crystal silicon elements over a semiconductor substrate;

forming one or more carbon nano tubes between adjacent hemispherical single crystal silicon elements;

forming a gate insulating layer over the hemispherical single crystal silicon elements, the semiconductor substrate, and the carbon nano tubes; and forming a gate material layer over the gate insulating layer.