Sunday, May 02, 2010

US Patent 7705347 - N-type CNTFET

In order to replicate CMOS device electronics with carbon nanotubes it is required to dope the nanotubes to be both electron donors (n-type) and electron acceptors (p-type). This patent from Samsung teaches a method to form n-type CNT transistors. Claim 1 reads:

1. An n-type CNT FET comprising:

a conductive substrate;

a gate oxide layer formed on the conductive substrate;

electrodes formed on the gate oxide layer and separated from each other; and

a CNT formed on the gate oxide layer and electrically connected to the electrodes;

wherein the gate oxide layer contains electron donor atoms which donate electrons to the CNT such that the CNT is n-doped by the electron donor atoms.