Thursday, January 21, 2010

US Patent 7649192 - Nanowire array LED grown in silicon microcavities

Semiconductor nanowire LEDs offers improvements in photoconversion efficiency over present LEDs but fabrication methods are limited in control of the placement of the nanowires on a substrate. This patent from Samsung teaches using microgrooves formed in a silicon wafer to control the growth location of nanowires. Claim 1 reads:

1. A nano wire structure comprising:

a silicon substrate having a surface where microgrooves having a plurality of microcavities are formed itself;

nano wires formed on the substrate from each of the microgrooves; and

a metal catalyst formed on one end of each of the nano wires.