Sunday, November 01, 2009

US Patent 7608854 - Branched nanowire with diffusion doping

This patent from Hewlett Packard teaches a method to grow pn junction nanowire structures useful for the fabrication of bipolar and field effect transistors. Claim 1 reads:

1. An electronic device, comprising:

a primary nanowire of a first conductivity type;

a secondary nanowire of a second conductivity type grown from and extending outwardly in one direction from the primary nanowire; and

a doped region of the second conductivity type diffused from and extending from the secondary nanowire into at least a portion of the primary nanowire.