Thursday, October 15, 2009

US Patent 7602030 - HfTaO nanolaminate dielectric

In order to continue the scalability of transistors predicted by Moore's Law there is increased investigation in new materials for the gate dielectric. This patent from Micron Technology teaches a new dielctric film material of hafnium tantalum oxide having a relative dielectric constant of 16-26 (compared to 3.9 for SiO2). Claim 1 reads:

1. An electronic device comprising:

a substrate;

a dielectric layer disposed above substrate, the dielectric layer having a hafnium tantalum oxide layer, the hafnium tantalum oxide being a bimetal oxide (HfxTayOz x>0, y>0, z>0), the hafnium tantalum oxide layer structured as one or more monolayers; and

a conductive layer on and contacting the dielectric layer.