Thursday, August 20, 2009

US Patent 7576410 - Nanotube power transistor

This patent from Infineon Technologies teaches the formation of a power transistor including nanotubes in the channel allowing for voltages of up to 600V with less complex gate construction. Claim 1 reads:

1. A power transistor, comprising:

a source region;

a drain region;

a semiconductor body arranged between the source region and the drain region;

a plurality of nanotubes connected in parallel and disposed in the semiconductor body, the plurality of nanotubes being electrically insulated from the semiconductor body and electrically connecting the source and drain regions; and

at least one diode formed in the semiconductor body, a portion of the at least one diode being configured to act as a gate electrode for the transistor.