US Patent 7541623 - ZnO nanorod heterostructure
http://www.freepatentsonline.com/7541623.html
The bandgap of zinc oxide semiconductors makes then useful for LED and laser applications. This patent from Postech Foundation teaches the fabrication of ZnO nanorods to achieve pn junctions for LEDs. Claim 1 reads:
1. A nano-device comprising a p-n hetrojunction structure of a p-type semiconductor thin film and an n-type ZnO-based nanorod epitaxially grown thereon, wherein free space around portions other than tip portions of the ZnO nanorod grown on the semiconductor thin film is filled with an insulating material.
The bandgap of zinc oxide semiconductors makes then useful for LED and laser applications. This patent from Postech Foundation teaches the fabrication of ZnO nanorods to achieve pn junctions for LEDs. Claim 1 reads:
1. A nano-device comprising a p-n hetrojunction structure of a p-type semiconductor thin film and an n-type ZnO-based nanorod epitaxially grown thereon, wherein free space around portions other than tip portions of the ZnO nanorod grown on the semiconductor thin film is filled with an insulating material.
Labels: POSTECH Foundation
posted by blaisemouttet at 5:05 PM
<< Home