Wednesday, May 27, 2009

US Patent 7537975 - CNT organic thin film transistor

This patent from Samsung appears to include a broad claim for an insulated gate thin film field effect transistor formed with a mixture of carbon nanotubes and organic materials in the channel. Claim 1 reads:

1. An electronic device, comprising:

a substrate; and

a thin film transistor formed over the substrate,

the thin film transistor comprising a channel, a gate electrode, an insulating layer, a source, and a drain, the insulating layer being interposed between the channel and the gate electrode, wherein the channel comprises a mixture of carbon nanotubes and an organic semiconductor material, and wherein the carbon nanotubes are distributed substantially throughout the channel.