Thursday, February 19, 2009

US Patent 7491968 - Memory using core/shell quantum dots

This patent from Samsung represents yet another variety of resistive switching non-volatile memory (RRAM). This variety is based on core/shell quantum dots in which a voltage controlled distribution of charge trapping sites in the quantum dots alter resistance states of memory cells. Claim 1 reads:

1. A memory device, comprising:

an upper electrode layer;

a lower electrode layer; and

a memory layer disposed between the upper electrode layer and the lower electrode layer, wherein the memory layer comprises quantum dots dispersed in an organic material, and wherein the quantum dots have a core-shell structure, and wherein the core is conductive and the shell is conductive.