Wednesday, February 18, 2009

US Patent 7491962 - RRAM with nanoparticle electrode

New systems of non-volatile memory such as RRAM or PRAM may be the next battle ground for nanoelectronics with a variety of companies proposing competing solutions based on different nanomaterials. This patent from Micron Technology teaches a chalcogenide memory using nanoparticles to achieve more predictable operation. Claim 1 reads:

1. A memory device, comprising:

a first electrode and a second electrode;

a chalcogenide glass layer between said first electrode and said second electrode; and

at least one nanoparticle positioned between said first electrode and said chalcogenide glass layer, wherein said chalcogenide glass layer is in contact with both the at least one nanoparticle and the first electrode and said at least one nanoparticle is separated from said second electrode by at least a portion of said chalcogenide glass layer.