Sunday, November 23, 2008

US Patent 7453081 - Phase change memory cell including nanocomposite insulator

This patent from Qimonda North America Corp. teaches a variation of phase change memory which incorporates insulating nanoparticles to lower the power required to change bit states. Claim 1 reads:

1. A memory cell comprising:

a first electrode;

a second electrode;

a storage material positioned between the first electrode and the second electrode; and

a nanocomposite insulator contacting the storage material;

wherein the nanocomposite insulator comprises a first material comprising a phase change material and a nano-scaled material comprising insulating nanoparticles distributed within a portion of the first material.