Sunday, November 23, 2008

US Patent 7452659 - Molecular layer nanogap patterning

This patent from The Penn State Research Foundation teaches a new method of patterning lateral nanoscale gaps using molecular sacrificial materials. Claim 1 reads:

1. A method of patterning a surface for use in a nanoscale device comprising:

depositing a first material on the surface;

applying a resist to the first material and to the surface;

applying a molecular layer to the first material;

applying a second material to the surface, such that the first material is separated from the second material by the molecular layer, wherein the second material and the molecular layer are selected such that the second material penetrates the molecular layer to deposit on the first material; and

removing the molecular layer to result in a structure formed from the first material and the second material.