Thursday, May 29, 2008

US Patent 7378701 - Phase change CNT memory

Phase change memory was initially proposed several decades ago by Stanford Ovshinsky but only recently have a variety of other companies been exploring the use of phase change and other materials in new non-volatile memory designs. This patent from Samsung teaches using carbon nanotubes as an interconnect element for phase change memory to achieve higher bit densities. Claim 1 reads:

1. An integrated circuit phase changeable memory device comprising:

an integrated circuit substrate;

a first electrode on the integrated circuit substrate;

a second electrode on the integrated circuit substrate and spaced apart from the first electrode; and

a carbon nano tube and a phase changeable layer serially disposed between the first and second electrodes.