Tuesday, May 20, 2008

US Patent 7374613 - High density quantum wire device


This patent from Japan Science and Technology Agency teaches a new way to form high density quantum wire devices using dislocations in ceramics or metals formed via compressions and heat treatment. Claim 1 reads:

1. A quantum wire device comprising a single-crystal material made of ceramic or metal, said single-crystal material internally having dislocations arranged one-dimensionally on respective straight lines at a high density of 106 to 1014/cm2, and quantum wires consisting of metal atoms introduced in said single-crystal material through a diffusion treatment, said quantum wires being arranged along said corresponding dislocations at a high density of 106 to 1014/cm2.